Atomic force microscopy measurement of the Young’s modulus and hardness of single LaB6 nanowires
Atomic force microscopy measurement of the Young’s modulus and hardness of single LaB6 nanowires
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DOI：
10.1063/1.2919718
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发表时间：
2008-05
影响因子：
4
通讯作者：
Han Zhang;Jie Tang;Lin Zhang;B. An;L. Qin
中科院分区：
文献类型：
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作者：
Han Zhang;Jie Tang;Lin Zhang;B. An;L. Qin
我们采用基于原子力显微镜的（a）三点弯曲和（b）纳米压痕方法来获得单根 LaB6 纳米线的杨氏模量和硬度。杨氏模量E=467.1±15.8GPa，与LaB6单晶相同，但大于烧结多晶LaB6样品。 LaB6纳米线在压痕深度4.6nm处的纳米压痕硬度为H=70.6±2.1GPa，高于LaB6单晶、LaB6多晶和W金属。 LaB6 纳米线作为场发射点电子源，预计具有优异的抗热振动、场修改和离子轰击能力。
We have employed the atomic force microscopy based (a) three-point bending and (b) nanoindentation methods to obtain the Young’s modulus and hardness of single LaB6 nanowires. The Young’s modulus, E=467.1±15.8GPa, is the same as that of the LaB6 single crystals but larger than the sintered polycrystalline LaB6 samples. The nanoindentation hardness of the LaB6 nanowire is H=70.6±2.1GPa at an indent depth of 4.6nm, which is higher than that of the LaB6 single crystals, LaB6 polycrystals, and W metals. A superior resistance against thermal vibration, field modification, and ion bombardment is expected for the LaB6 nanowires as a field-emission point electron source.