Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells
Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells
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DOI：
10.1063/1.99847
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发表时间：
1988-08
影响因子：
4
通讯作者：
K. Fujiwara;N. Tsukada;T. Nakayama
中科院分区：
文献类型：
--
作者：
K. Fujiwara;N. Tsukada;T. Nakayama
报道了在分子束外延生长的名义上未掺杂的GaAs/AlGaAs单量子威尔斯阱的室温光致发光中观察到的自由激子。与平行传导光电流光谱的比较研究表明，在6.1 nm宽的阱中观察到的线宽为14 meV的尖锐发光峰与过量载流子密度小于1017 cm−3时的n=1重空穴自由激子共振线在2 meV内重合。激子衰减通道占主导地位的发光光谱，即使在室温下作为量子限制效应的结果，虽然光生载流子也提供了光电流激子解离。
Observation of free excitons is reported in room‐temperature photoluminescence of nominally undoped GaAs/AlGaAs single quantum wells grown by molecular beam epitaxy. A comparative study with parallel‐conduction photocurrent spectroscopy shows that a sharp luminescence peak with a linewidth of 14 meV observed for the 6.1‐nm‐wide well coincides within 2 meV with the n=1 heavy‐hole free‐exciton resonance line at excess carrier densities less than 1017 cm−3. Excitonic decay channels dominate the luminescence spectrum even at room temperature as a result of quantum confinement effects, although photogenerated carriers are also provided for photocurrents by exciton dissociations.