Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles
Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles
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DOI：
10.1021/jp2117938
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发表时间：
2012-05
影响因子：
3.7
通讯作者：
Manuel J Llansola Portolés;R. Pis Diez;M. L. Dell’Arciprete;P. Caregnato;Juan José Romero;D. Mártire
中科院分区：
文献类型：
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作者：
Manuel J Llansola Portolés;R. Pis Diez;M. L. Dell’Arciprete;P. Caregnato;Juan José Romero;D. Mártire
采用化学湿法自底向上(BU)法制备了尺寸为1~5 nm的硅纳米颗粒(SiNPs)。假设纯物质以独特的形式存在，呈现激发波长不变的发射光谱，分析了不同发射体对整个激发-发射矩阵的贡献。透射电子显微镜、小角X射线散射、时间分辨单光子计数和时间分辨各向异性实验支持不同尺寸和聚集的发射体的存在。研究了老化引起的颗粒表面氧化对光致发光(PL)的影响，并与采用HF刻蚀电化学方法自上而下(TD)获得的表面氧化颗粒进行了比较。表面氧化为SiOx似乎对SiNP发光有两种不同的影响。在BOT合成的SiNPs中发现了与SiOx相关的表面态的发射。
Silicon nanoparticles of 1–5 nm size (SiNPs) were synthesized by a bottom-up (BU) approach involving a chemical wet method. The contribution of different emitters to the overall excitation–emission matrix was analyzed on the assumption that pure substances existing in a unique form show an excitation wavelength-invariant emission spectrum. The occurrence of emitters differing in size and aggregation was supported by transmission electron microscopy (TEM), small-angle X-ray scattering (SAXS), time-resolved single photon counting, and time-resolved anisotropy experiments. The effect on photoluminescence (PL) of the particle surface oxidation as a result of aging is studied and compared to that of surface oxidized particles obtained by a top-down (TD) approach following an electrochemical method with HF etching. Surface oxidation to SiOx seems to introduce two different effects on the SiNP PL. An emission originated in surface states associated to SiOx was identified and observed for SiNPs synthesized by bot...