Super high-dielectric-constant oxide films for next-generation nanoelectronics and supercapacitors for energy storage
Super high-dielectric-constant oxide films for next-generation nanoelectronics and supercapacitors for energy storage
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DOI：
10.1557/mrs.2020.67
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发表时间：
2020-03-01
期刊：
影响因子：
5
通讯作者：
de Obaldia, Elida
中科院分区：
文献类型：
--
作者：
Auciello, Orlando;Lee, Geunhee;de Obaldia, Elida
电介质是电绝缘体材料，通过跨材料厚度的电场使正离子化原子和负离子化原子相反位移而极化。电介质用于储能电容器，作为现代微/纳电子学、高频和移动的通信设备以及救生微芯片和其他设备（例如可植入人体的除颤器和起搏器）的关键部件。关键介电参数是介电常数（k），其在很大程度上控制具有纳米级面积和介电层厚度的电容器中的电容。在氧化物中观察到极高的介电常数（k ≥ 1000）（例如，La1.8Sr0.12NiO4）与弛豫/铁电材料以及具有高电阻晶界的组合半导体体性质。巨介电常数膜也已经被证明，基于将相对低介电常数的氧化物集成到纳米层压结构（例如，TiOx/Al 2 O3; TiO 2/HfO 2），具有定制的子层厚度、界面和氧原子分布。这篇综述文章讨论了具有不同组成和结构的高介电常数氧化物材料的科学和技术。
Dielectrics are electrical insulator materials, polarizable by opposite displacement of positive and negative ionized atoms via electric fields across the material's thickness. Dielectrics are used in energy-storage capacitors, as key components in modern micro-/nanoelectronics, high-frequency and mobile communication devices, and life-saving microchips and other devices such as defibrillators and pacemakers implantable in humans. A key dielectric parameter is the dielectric constant (k), which largely controls the capacitance in capacitors with nanoscale area and dielectric layer thickness. Extremely high dielectric constants (k >= 1000) were observed in oxides (e.g., La1.8Sr0.12NiO4) with relaxor/ferroelectric materials and in combined semiconducting bulk properties with highly resistive grain boundaries. Giant dielectric constant films have also been demonstrated, based on integrating relatively low-dielectric-constant oxides into nanolaminate structures (e.g., TiOx/Al2O3; TiO2/HfO2) with tailored sublayer thicknesses, interfaces, and oxygen atom distributions. This overview article addresses the science and technology of high-dielectric-constant oxide materials with different compositions and structures.