Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
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DOI：
10.1103/physrevb.67.153306
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发表时间：
2003-04-15
影响因子：
3.7
通讯作者：
Ambacher, O
中科院分区：
文献类型：
--
作者：
Jena, D;Heikman, S;Ambacher, O
在梯度AlxGa1-xN半导体层中，观察到偏振掺杂三维电子板的舒布尼科夫-德哈斯振荡。利用空间变化极化对极性半导体合金进行分级制备电子板。温度相关的振荡使我们能够提取m*=0.21m(0)的有效质量。测量到的量子散射时间（tau(q)=0.3 ps）与输运散射时间（tau(t)=0.34 ps）接近，表明短程散射占主导地位。确定合金散射是限制迁移率的主要机制；这使我们能够提取出AlxGa1-xN材料体系的合金散射参数V-0=1.8 eV。极化掺杂为研究电荷输运和集体现象的维数效应提供了一种令人兴奋的技术，用于制造具有广泛可调密度和约束的电子板。
Shubnikov-de-Haas oscillation is observed in a polarization-doped three-dimensional electron slab in a graded AlxGa1-xN semiconductor layer. The electron slab is generated by the technique of grading the polar semiconductor alloy with spatially changing polarization. Temperature-dependent oscillations allow us to extract an effective mass of m*=0.21m(0). The quantum scattering time measured (tau(q)=0.3 ps) is close to the transport scattering time (tau(t)=0.34 ps), indicating the dominance of short-range scattering. Alloy scattering is determined to be the dominant mechanism-limiting mobility; this enables us to extract an alloy-scattering parameter of V-0=1.8 eV for the AlxGa1-xN material system. Polarization-doping presents an exciting technique for creating electron slabs with widely tunable density and confinement for the study of dimensionality effects on charge transport and collective phenomena.