Interdiffusion measurements in asymmetrically strained SiGe/Si superlattices
Interdiffusion measurements in asymmetrically strained SiGe/Si superlattices
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非对称应变 SiGe/Si 超晶格中的相互扩散测量
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
Kang L. Wang
中科院分区：
文献类型：
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作者：
S. Prokes;Kang L. Wang
报道了530 °C下分子束外延生长的Si_（0.65）Ge_（0.35）/Si非对称应变超晶格的互扩散测量结果。从X射线衍射获得的温度依赖性互扩散系数可以通过D=675 exp（−4.4 eV/kT）cm 2/s在700-880 °C的温度范围内描述。最初，观察到增强的扩散，特别是在超晶格表面附近。这归因于非平衡缺陷的存在。体相互扩散测量后，才获得isoconformational条件。扩散分析首先由J. W. Cahn [Acta Metall. 9，795（1961）]，并讨论了梯度能量效应和相干应变效应的相对重要性。
Interdiffusion measurements are reported for Si0.65Ge0.35/Si asymmetrically strained superlattices grown by molecular beam epitaxy at 530 °C. The temperature‐dependent interdiffusion coefficient obtained from x‐ray diffraction can be described by D=675 exp(−4.4 eV/kT)cm2/s in the temperature range 700–880 °C. Initially, an enhanced diffusion was observed, especially near the superlattice surface. This is attributed to the presence of nonequilibrium defects. Bulk interdiffusion measurements were made only after isoconfigurational conditions were attained. The diffusion analysis first formulated by J. W. Cahn [Acta Metall. 9, 795 (1961)] is applied here, and the relative importance of both gradient energy effects and coherency strain effects will be discussed.