Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique
Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique
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部分电离束沉积技术生长外延Ag/Si薄膜
DOI：
10.1063/1.347363
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发表时间：
1991
影响因子：
3.2
通讯作者：
T. Lu
中科院分区：
文献类型：
--
作者：
T. C. Nason;L. You;G;T. Lu
报道了在常规真空条件下在Si（111）衬底上气相沉积Ag薄膜的室温外延观察结果。在350 °C下也观察到外延。使用部分电离束沉积系统沉积膜，并且膜通常为1500 A厚。通过极图分析证实了表位。扫描电子显微镜显示即使对于室温膜也具有优异的表面平坦度。与以前的观察结果相反，生长被发现进行层模式，即使在升高的温度。这种形态上的变化归因于由于高能离子的成核位点的密度增强。
The observation of room‐temperature epitaxy of vapor‐deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 A thick. Epitaxy was confirmed via pole‐figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room‐temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.