Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes
Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes
复制标题
30 THz 下 GaAs 肖特基势垒二极管的视频检测和混合性能以及与金属-绝缘体-金属二极管的比较
DOI：
10.1063/1.355980
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发表时间：
1994
影响因子：
3.2
通讯作者：
H. Röser
中科院分区：
文献类型：
--
作者：
H. Hübers;G. Schwaab;H. Röser
使用GaAs肖特基势垒二极管和W-Ni金属-绝缘体-金属（MIM）二极管进行了0.7至30 THz的视频检测实验和30 THz的混合实验。在大约12 THz以上，MIM二极管是更灵敏的视频检测器（在30 THz时为5-10倍）。通过在肖特基二极管中混合两个相邻CO2激光线和微波源的辐射，产生高达34 GHz的差频。不同的二极管参数（掺杂浓度，等离子体频率，截止频率）和偏置电流上的混频信号的依赖关系进行了测量。与30 THz的MIM二极管相比，肖特基势垒二极管的混频效率较低（104倍）。结果表明，电子发射是占主导地位的物理机制，负责视频检测和混合在30太赫兹。
Video detection experiments from 0.7 to 30 THz and mixing experiments at 30 THz have been performed with GaAs Schottky‐barrier diodes and W‐Ni metal‐insulator‐metal (MIM) diodes. Above approximately 12 THz the MIM diode is the more sensitive video detector (a factor of 5–10 at 30 THz). Difference frequencies up to 34 GHz were generated by mixing the radiation of two adjacent CO2 laser lines and a microwave source in a Schottky‐barrier diode. The dependence of the mixing signal on different diode parameters (doping density, plasma frequency, cutoff frequency) and on bias current was measured. Compared with MIM diodes at 30 THz the Schottky‐barrier diodes are less efficient for mixing (a factor of 104). The results suggest that thermionic emission is the dominant physical mechanism responsible for video detection and mixing at 30 THz.