Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
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DOI：
10.1016/j.surfcoat.2008.06.133
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发表时间：
2008-12-25
影响因子：
5.4
通讯作者：
Tseng, Tseung-Yuen
中科院分区：
文献类型：
--
作者：
Lin, Chih-Yang;Lee, Dai-Ying;Tseng, Tseung-Yuen
研究了Pt/Ti/Al 2 O3/Pt存储器件在400 ℃、500 ℃和600 ℃退火1 h后的电阻开关特性。X射线衍射（XRD）分析表明，在600 ℃退火1 h后的Al 2 O3薄膜仍为非晶相。随着退火温度的升高，存储器器件的形成电压（激活原始器件）与导通电压（从高电阻状态切换到低电阻状态）的上升趋势相反地降低。然而，关断电压（从低电阻状态切换到高电阻状态）几乎不受热退火的影响。根据二次离子质谱（西姆斯）和高分辨透射电镜（HR-TEM）分析结果，这些现象可能是由于Ti和Al_2 O_3之间的相互扩散所致。此外，热退火工艺最终在两个电极之间产生具有高密度氧空位的高导电路径。(c)2008 Elsevier B. V.保留所有权利。
Resistive switching characteristics of Pt/Ti/Al2O3/Pt memory devices annealed at various temperatures including 400 degrees C, 500 degrees C and 600 degrees C for 1 h under ambient condition were investigated in the study. The Al2O3 thin films annealed at up to 600 degrees C for 1 h remain amorphous phase based on the X-ray diffraction (XRD) analyses. As increasing annealing temperature, the forming voltage (activating the pristine device) of the memory device decreases in contrast to the rising trend of the turn-on voltage (switching from high to low resistance state). However, the turn-off voltage (switching from low to high resistance state) is almost uninfluenced by thermal annealing. These phenomena might be attributed to the interdiffusion between Ti and Al2O3, based on the analyzed results of secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscope (HR-TEM). Moreover, the thermal annealing process eventually creates high conducting paths with a high density of oxygen vacancies between the two electrodes. (c) 2008 Elsevier B.V. All rights reserved.