Pit formation in GaInN quantum wells
Pit formation in GaInN quantum wells
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DOI：
10.1063/1.120853
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发表时间：
1998-02-09
影响因子：
4
通讯作者：
Wang, SY
中科院分区：
文献类型：
--
作者：
Chen, Y;Takeuchi, T;Wang, SY
利用原子力显微镜和透射电子显微镜研究了GaInN量子阱中凹坑的形成。发现凹坑具有六面体锥形形态，在[]平面上有六个侧壁，并且位错与它们的顶点相连。位错在生长过程中会诱发凹坑的形成。(C) 1998美国物理研究所。
The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on [] planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs. (C) 1998 American Institute of Physics.