Growth of carbon nanotubes at temperatures compatible with integrated circuit technologies
Growth of carbon nanotubes at temperatures compatible with integrated circuit technologies
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DOI：
10.1016/j.carbon.2010.09.021
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发表时间：
2011-01-01
期刊：
影响因子：
10.9
通讯作者：
Silva, S. R. P.
中科院分区：
文献类型：
--
作者：
Chen, Guan Yow;Jensen, Ben;Silva, S. R. P.
生长用于半导体和传感器设备的碳纳米管的潜在应用是巨大的，但是，这种生长必须是与CMOS兼容的，并且在直径超过4英寸的大面积上，对于任何工业利益来说，关于碳纳米管的低温生长的报道大多导致了在CMOS生产的背景下的虚假曙光，而用于大规模制造的直接集成仍然是一个挑战，因为与制造匹配的较低的合成温度导致具有高缺陷能级的纳米管的产生。我们报道了一种允许能量直接传递到催化剂的独特的自上而下的合成方法，从而在兼容的低衬底温度下产生更高质量的纳米管生长。在将硅衬底保持在350摄氏度以下的同时，碳纳米管的长程有序得到了良好的二阶拉曼峰和高分辨电子显微镜的支持。所开发的方法适用于生产许多纳米材料系统，包括石墨烯和硅纳米线(C)2010爱思唯尔有限公司，版权所有
The potential applications of carbon nanotubes grown for semiconductor and sensor devices are immense But, this growth must be CMOS compatible and over large-areas, in excess of 4 inches in diameter, for any industrial interest Reports of low-temperature growth of carbon nanotubes have mostly resulted in false dawns in the context of CMOS production, with direct integration for mass manufacturing remaining a challenge, as lower synthesis temperatures matched to manufacturing result in nanotubes with high defect levels We report a unique 'top-down' synthesis method that allows energy delivery directly to the catalyst, resulting in higher quality nanotube growth at compatible low sub strate temperatures This growth is demonstrated over a large-area, whilst maintaining the silicon substrate below 350 degrees C Long-range ordering of carbon nanotubes is supported by well developed second order Raman peaks and HREM The methodology developed is suitable to produce many nano-material systems, including graphene and silicon nanowires (C) 2010 Elsevier Ltd All rights reserved