Characterization of ultrathin sputtered SiO films on alumina by inelastic electron tunneling spectroscopy and atomic force microscopy
Characterization of ultrathin sputtered SiO films on alumina by inelastic electron tunneling spectroscopy and atomic force microscopy
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DOI：
10.1116/1.577976
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发表时间：
1992-07
期刊：
影响因子：
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通讯作者：
R. Mallik;P. Henriksen;T. Butler;W. J. Kulnis;T. Confer
中科院分区：
文献类型：
--
作者：
R. Mallik;P. Henriksen;T. Butler;W. J. Kulnis;T. Confer
Amorphous SiO films are prepared by radio‐frequency planar magnetron sputtering in a background of argon. Inelastic electron tunneling spectra are presented of the films incorporated in Al/SiO/Pb tunnel junctions with the aluminium films pre‐ or post‐oxidized relative to the SiO deposition stage. Both the aluminium and lead junction electrodes are evaporated in a standard oil diffusion pumped, liquid nitrogen trapped vacuum system at a base pressure of 10−7 Torr; aluminium oxidation is achieved either by admitting oxygen into the vacuum chamber or by performing a low power dc oxygen glow discharge. Spectra obtained are similar, but not identical, to those obtained for evaporated SiO films. Different types of silicon hydride species are observed depending on the environment to which the SiO films are exposed after their deposition. Possible reactions of the films with water vapor are discussed which could produce the observed hydrides which are also assigned. Reverse bias tunneling spectra provide strong e...
