Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations
复制标题
在高甲烷浓度下生长的无小丘同质外延金刚石 (100) 薄膜
DOI：
10.1143/jjap.44.l216
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发表时间：
2005
影响因子：
1.5
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
M. Hamada;T. Teraji;T. Ito
提出了一种改进的高质量、表面平整的同质外延金刚石薄膜生长工艺。生长小丘导致粗糙的表面几乎完全抑制下的新的生长过程中，衬底温度被设置到一个特定的区域。厚度高达11 μm的同质外延薄膜在室温阴极发光光谱中产生强烈的自由激子复合发射，这一事实证明了电子态的高质量。结果表明，金刚石横向生长后表面上出现的瓣状痕迹是由于金刚石表面残留的缺陷造成的。观察到的明显的横向生长的起源进行了讨论，在衬底温度升高到1000°C的台阶边缘生长的速度提高。
Improved growth processes for homoepitaxial diamond films with high quality and flat surfaces have been presented. Growth hillocks leading to rough surfaces were almost perfectly suppressed under the new growth processes, where the substrate temperature was set to a particular region. The high quality in electronic states was evidenced by the fact that the homoepitaxial films with thicknesses up to 11 µm gave intense free-exciton recombination emissions in room-temperature cathodoluminescence spectra. It is concluded that lobe-shape marks appearing on the surface after an apparent lateral diamond growth came from defects left on the substrate surface. The origin of the apparent lateral growth observed is discussed in relation to an enhanced speed of the step edge growth at the substrate temperature elevated to ∼1000°C.