Gain-clamped S-band discrete Raman amplifier
Gain-clamped S-band discrete Raman amplifier
复制标题
增益钳位 S 波段离散拉曼放大器
DOI：
10.1109/ofc.2002.1036434
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
Y. Akasaka
中科院分区：
文献类型：
--
作者：
S. Yam;F. An;E. Hu;M. Marhic;T. Sakamoto;L. Kazovsky;Y. Akasaka
总之，据我们所知，我们第一次展示了S波段的增益钳制分立拉曼放大器。该器件的峰值净增益超过22dBm，在-20dBm~2.7dBm的信号输入功率范围内，增益变化仅为0.3dBm。与传统的增益钳位设计不同，它实现了信号与激光波长之间的消光比超过30分贝。这一新技术抑制了高泵浦功率下小信号输入功率下随机极化ASE和双瑞利散射(DRS)引起的不稳定性，以及拉曼放大器中由于瞬时效应而产生的功率浪涌。这有望提供一种可行的技术，以提供传统掺杂光纤放大器目前无法提供的增益带。
In summary, we have demonstrated, for the first time to our knowledge, a gain-clamped discrete Raman amplifier in the S-band. The device achieves peak net gain over 22 dB, and a gain variation of only 0.3 dB for signal input power ranging from -20 dBm to 2.7 dBm. Unlike conventional gain-clamping designs, an extinction ratio between signal and lasing wavelength of over 30 dB is achieved. This new technique suppresses instability due to randomly-polarized ASE and double Rayleigh scattering (DRS) (hence noise figure) for small signal input power under high pump power, as well as power surges due to transient effects in Raman amplifiers. This promises a viable technology to provide gain bands not currently available from traditional doped fiber amplifiers.