Application of scanning tunneling microscopy nanofabrication process to single electron transistor
Application of scanning tunneling microscopy nanofabrication process to single electron transistor
复制标题
扫描隧道显微镜纳米加工工艺在单电子晶体管中的应用
DOI：
10.1116/1.589091
复制
发表时间：
1996
影响因子：
1.4
通讯作者：
K. Segawa
中科院分区：
文献类型：
--
作者：
K. Matsumoto;M. Ishii;K. Segawa
单电子晶体管是用扫描隧道显微镜用一种新的制造工艺制造的。单电子晶体管在室温下工作，显示出150 mV周期的清晰库仑阶梯。使用扫描隧道显微镜的尖端作为阴极，并且Ti层的表面被氧化以形成窄的氧化Ti线。使用该氧化Ti线，制造单电子晶体管的岛区域。氧化后的钛线的电性能也进行了详细的检查。
The single electron transistor was fabricated by quite a new fabrication process using scanning tunneling microscopy. The single electron transistor operates at room temperature showing a clear Coulomb staircase of 150 mV periods. The tip of the scanning tunneling microscope was used as a cathode, and the surface of the Ti layer was oxidized to form a narrow oxidized Ti line. Using this oxidized Ti line, the island region of the single electron transistor was fabricated. The electrical property of the oxidized Ti line was also examined in detail.