Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
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DOI：
10.1063/1.2745223
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发表时间：
2007-05-28
影响因子：
4
通讯作者：
Heeger, A. J.
中科院分区：
文献类型：
--
作者：
Meyertholen, A. D.;Li, Z. Q.;Heeger, A. J.
作者表明，红外成像的电荷密度分布在有机场效应晶体管（fet）可以探测传输特性，这是难以获得传统的基于接触的测量。具体来说，他们进行了聚（3-己基噻吩）（P3HT）场效应管的红外光谱显微镜实验和建模，其中电荷注入受到栅极绝缘体相对较低电阻的影响。他们得出结论，P3HT的迁移率具有幂律密度依赖性，这与无序诱导的态密度尾部的激活输运一致。(C) 2007年美国物理研究所。
The authors show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, they carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. They conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states. (C) 2007 American Institute of Physics.