Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
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DOI：
10.1063/1.2132073
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发表时间：
2005-11-14
影响因子：
4
通讯作者：
Park, QH
中科院分区：
文献类型：
--
作者：
Kim, DH;Cho, CO;Park, QH
我们观察到一个显着增强的光输出从GaN基发光二极管（LED），其中二维光子晶体（PC）图案集成。利用激光全息术制作了周期为300 ~ 700 nm的二维正方形点阵空气孔阵列图案。与通常使用的电子束光刻技术不同，全息方法可以以高产量在大面积上制作图案。所得的具有类似于500 nm的图案周期的PC-LED器件具有超过两倍的输出功率，如从器件的顶部测量的。实验结果与三维时域有限差分模拟结果定性一致。(C)2005年美国物理学会。
We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. Two-dimensional square-lattice air-hole array patterns with a period that varied from 300 to 700 nm were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of similar to 500 nm had more than double the output power, as measured from the top of the device. The experimental observations are qualitatively consistent with the results of three-dimensional finite-difference-time-domain simulation. (C) 2005 American Institute of Physics.