Initial stages of heterojunction formation: Si on GaAs(100)
Initial stages of heterojunction formation: Si on GaAs(100)
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异质结形成的初始阶段：GaAs(100) 上的 Si
DOI：
10.1116/1.577552
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
F. Soria
中科院分区：
文献类型：
--
作者：
F. Palomares;M. A. Méndez;M. T. Cuberes;F. Soria
利用俄歇电子能谱和低能电子衍射（LEED）研究了在300、600和770 K下在c（8×2）-Ga表面上生长的Si/GaAs（100）界面。Si沉积在室温下高达8个单层（ML）的结果在无序的Si表面。在600 K时，第一个2 Si ML赝晶生长到衬底上，并在0.75 ML处形成有序的1×1结构。在770 K时，Si遵循Stranski-Krastanov机制。最高可达0.25SiML的a（4×2）结构，这是以前从未报道过的。从0.25到0.75 ML，发展出（1×2）图案，与0.75 ML以上的（2×1）畴共存。这种域的交替表明Si在两个正交表面方向上的二聚化。在约1 ML处，（1×2）和（2×1）结构具有相等的强度。1.25 ML以上的条纹特征出现在布拉格斑点方向之后。这种LEED模式甚至可以在大于4 ML的覆盖范围内看到，...
Si/GaAs(100) interfaces grown at 300, 600, and 770 K on c(8×2)‐Ga surfaces prepared by simultaneous argon bombardment at 600 V and annealing cycles at temperatures lower than 800 K have been studied by Auger electron spectroscopy and low‐energy electron diffraction (LEED). Si deposition at room temperature up to 8 monolayers (ML) results in disordered Si surfaces. At 600 K the first 2 Si ML grow pseudomorphically to the substrate with the formation of an ordered 1×1 structure at about 0.75 ML. At 770 K Si follows a Stranski–Krastanov mechanism. Up to 0.25 Si ML a (4×2) structure, never reported before, is detected. From 0.25 to 0.75 ML a (1×2) pattern develops which coexists with (2×1) domains above 0.75 ML. This alternation of domains indicates Si dimerization in two orthogonal surface directions. At about 1 ML the (1×2) and (2×1) structures have equal intensities. Above 1.25 ML streaks features appear following the Bragg spot directions. This LEED pattern can be seen even at coverages greater than 4 ML,...