Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor.
Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor.
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DOI：
10.1103/physrevlett.95.187405
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发表时间：
2005-04
影响因子：
8.6
通讯作者：
K. Fu;C. Santori;C. Stanley;M. Holland;Y. Yamamoto
中科院分区：
文献类型：
--
作者：
K. Fu;C. Santori;C. Stanley;M. Holland;Y. Yamamoto
在强磁场下的高纯度n型GaAs中，我们能够分离出由中性施主束缚电子的两个塞曼态和束缚激子的最低塞曼态组成的lambda系统。当该系统的双光子失谐为零时，我们观察到激发态光致发光的明显下降，表明相干布居捕获态的产生。我们的数据与稳态三级密度矩阵模型一致。 GaAs 中相干布居捕获的观察表明，该系统和类似的半导体系统可用于各种电磁感应透明类型的实验。
In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.