Tailoring the chirality of magnetic domain walls by interface engineering

Tailoring the chirality of magnetic domain walls by interface engineering
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通过界面工程定制磁畴壁的手性

DOI:
10.1038/ncomms3671
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发表时间:
2013-10-01
影响因子:
16.6
通讯作者:
Schmid, Andreas K.
Schmid, Andreas K.
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Chen, Gong;Ma, Tianping;Schmid, Andreas K.

文献摘要

被引文献

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铁磁薄膜与普通金属的接触改变了磁性纹理对电流的响应方式,从而实现了令人惊讶的快速畴壁运动和自旋纹理相关的传播方向。这些影响归因于畴壁手性诱导的Dzyaloshinskiii-Moriya相互作用在接口,这表明丰富的可能性,影响畴壁动力学,如果Dzyaloshinskiii-Moriya相互作用可以调整。手性磁性被认为是在适当选择的基板上的界面自旋轨道耦合效应很强的几种薄膜结构。在这里,我们使用真实空间成像可视化手性域壁钴/镍多层膜接触铂和铱。我们表明,Dzyaloshinskiii-Moriya相互作用可以调整,以稳定左手或右手尼尔墙,或非手性布洛赫墙通过调整多层膜和基板之间的界面间隔层。我们的研究结果引入畴壁手性作为一个新的自由度,这可能会打开自旋电子器件设计的新机会。
Contacting ferromagnetic films with normal metals changes how magnetic textures respond to electric currents, enabling surprisingly fast domain wall motions and spin texture-dependent propagation direction. These effects are attributed to domain wall chirality induced by the Dzyaloshinskii-Moriya interaction at interfaces, which suggests rich possibilities to influence domain wall dynamics if the Dzyaloshinskii-Moriya interaction can be adjusted. Chiral magnetism was seen in several film structures on appropriately chosen substrates where interfacial spin-orbit-coupling effects are strong. Here we use real-space imaging to visualize chiral domain walls in cobalt/nickel multilayers in contact with platinum and iridium. We show that the Dzyaloshinskii-Moriya interaction can be adjusted to stabilize either left-handed or right-handed Neel walls, or non-chiral Bloch walls by adjusting an interfacial spacer layer between the multilayers and the substrate. Our findings introduce domain wall chirality as a new degree of freedom, which may open up new opportunities for spintronics device designs.