Effect of power on the growth of nanocrystalline silicon films
Effect of power on the growth of nanocrystalline silicon films
复制标题
功率对纳米晶硅薄膜生长的影响
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Jhuma Gope
中科院分区：
文献类型：
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作者：
Sushil Kumar;P. Dixit;C. Rauthan;A. Parashar;Jhuma Gope
Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20–100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm−1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.
