Control of Organic Interfaces with a Thin Film of Silicon Monoxide between 8-Hydroxyquinoline Aluminum and Diamine Layers in an Organic EL Diode
Control of Organic Interfaces with a Thin Film of Silicon Monoxide between 8-Hydroxyquinoline Aluminum and Diamine Layers in an Organic EL Diode
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有机 EL 二极管中 8-羟基喹啉铝和二胺层之间的一氧化硅薄膜控制有机界面
DOI：
10.1143/jjap.36.l1022
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发表时间：
1997
影响因子：
1.5
通讯作者：
K. Yoshino
中科院分区：
文献类型：
--
作者：
Y. Ohmori;Y. Kurosaka;N. Tada;A. Fujii;K. Yoshino
在电致发光（EL）二极管中的8-羟基喹啉铝（Alq 3）和二胺衍生物（TPD）层的界面处插入一氧化硅（SiO）薄膜增强了来自Alq 3层的发射。从异质界面的发射增强的机制已被讨论相对于包含一个薄膜的标记层的二极管的发射光谱，该标记层被插入到发射层附近的接口。本文讨论了硅氧化层厚度对发光强度的影响。
The insertion of a thin film of silicon monoxide (SiO) at the interface of the 8-hydroxyquinoline aluminum (Alq3) and the diamine derivative (TPD) layers in the electroluminescent (EL) diode enhances the emission from the Alq3 layer. The mechanism of emission enhancement from the hetero interfaces has been discussed with respect to the emission spectra of the diodes containing a thin film of a marker layer which was inserted into the emissive layer near the interface. The SiO layer thickness dependence on EL intensity in the diode with the SiO layer has been discussed.