Raman scattering in a Ga1−xInxP strained heterostructure
Raman scattering in a Ga1−xInxP strained heterostructure
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DOI：
10.1063/1.343498
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发表时间：
1989-07
影响因子：
3.2
通讯作者：
R. M. Abdelouhab;R. Braunstein;K. Bärner;M. Rao;H. Kroemer
中科院分区：
文献类型：
--
作者：
R. M. Abdelouhab;R. Braunstein;K. Bärner;M. Rao;H. Kroemer
Raman scattering was employed to study the optical phonon modes in Ga1−x Inx P heterostructures. The stress calculated from the pressure coefficient and the observed frequency shift for the GaP‐like LO phonon is larger than the one obtained from the lattice mismatch given by the elastic theory; the possibility of other types of defects responsible for this difference is considered. The presence of internal stress in epitaxial layers could induce a switchover from one‐ to two‐mode behavior. The modified random element isodisplacement model is used to explore this possibility.
