A New Vertical JFET Power Device for Harsh Radiation Environments
A New Vertical JFET Power Device for Harsh Radiation Environments
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DOI：
10.3390/en10020256
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发表时间：
2017-02-01
期刊：
影响因子：
3.2
通讯作者：
Vellvehi, Miquel
中科院分区：
文献类型：
--
作者：
Fernandez-Martinez, Pablo;Flores, David;Vellvehi, Miquel
现在对能够在恶劣辐射环境下运行的电力电子设备的需求不断增长。具体来说，在高能物理实验中，所需的功率器件预计能够承受非常高的辐射水平，这对于大多数可用的商业解决方案来说通常太难了。在此背景下，巴塞罗那微电子研究所、国家微电子中心（IMB-CNM、CSIC）设计并制造了一种新型垂直结型场效应晶体管（JFET）。新型硅 V-JFET 器件利用深沟技术来实现体积导通和低关断电压，以及适度的高电压能力。第一批 V-JFET 原型已在 IMB-CNM 洁净室中制造出来，本文对它们的设计、制造及其表征结果的几个方面进行了总结和讨论。所制造的晶体管的辐射硬度已经通过伽马和中子辐照进行了测试，结果也包含在贡献中。
An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.