Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects
Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects
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MESFET与Si、GaAs、SiC和GaN衬底效应的性能对比分析
DOI：
10.1109/piers53385.2021.9694726
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
W. Rowe
中科院分区：
文献类型：
--
作者：
Waseem Afzal;Amir Afaq;S. Rehman;W. Rowe
在过去的十年中，为了改进场效应晶体管，人们进行了多次尝试。本文对 FET 小信号建模进行了比较分析。提出了一种应用于毫米波应用 FET 的改进且熟练的参数提取策略，介绍了有关损耗的不同性能参数及其随较高频率的变化。已经在室温下以最大跨导测量了 0.1 GHz 至 40 GHz 频率范围内的散射参数。通过 S 参数估计来调查执行情况，利用去嵌入方法评估器件的内在和外在参数。比较实验值和模拟值，发现非常吻合。
Several attempts have been made in the last decade for the advancement of field effect transistors. In this paper, comparative analysis of small signal modeling of FET has been presented. An improved and a proficient parameter extraction strategy applied to FET for mm-wave applications, different performance parameters regarding losses and their variation with higher frequencies are presented. Measurements of the scattering parameters from frequency range of 0.1 GHz to 40 GHz at room temperature with maximum transconductance have been performed. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters by utilizing de-embedding method. Experimental and simulated values are compared and found to be in excellent agreement.