Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation
Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation
复制标题
飞秒激光辐照覆盖微结构硅顶部硫超掺杂层的研究
DOI：
10.1016/j.apsusc.2018.09.125
复制
发表时间：
2019
影响因子：
6.7
通讯作者：
Zhang Zhuo
中科院分区：
文献类型：
--
作者：
Wang Ke;Gao Jinsong;Yang Haigui;Wang Xiaoyi;Wang Yanchao;Zhang Zhuo
We studied the infrared absorption of a top sulfur hyperdoping layer covering an fs-laser irradiated microstructured Si substrate. To clarify the hyperdoping concentration distributions, and to find out how the top hyperdoping layer affects infrared absorption from 1200 to 2000 nm, a continuous etching treatment was utilized. Then we interpreted the thermal stabilization of both infrared absorption and sulfur hyperdoping concentration. The fundamental cause for infrared-absorption degradation under thermal annealing was explained. Furthermore, we discussed in detail how the interaction between the top hyperdoping layer and surface microstructure contributed to the high infrared absorption by a series of theoretical simulations using a finite-difference time-domain method. A strong localization of an incident electromagnetic wave was observed around the top sulfur hyperdoping layer covering microstructured Si, which played a critical role in improving infrared absorption. The results in this paper are especially beneficial to the subsequent fabrication of photoelectric devices and infrared response improvement.
