Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition
Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition
复制标题
通过离子束溅射沉积生长的 h-BN/β-Ga2O3 异质结构的能带对准
DOI：
10.1016/j.apsusc.2022.154559
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发表时间：
2022
影响因子：
6.7
通讯作者：
Xingwang Zhang
中科院分区：
文献类型：
--
作者：
Jingren Chen;Junhua Meng;Yong Cheng;Yiming Shi;Gaokai Wang;Jidong Huang;Siyu Zhang;Zhigang Yin;Xingwang Zhang
·首次在β-Ga 2 O3衬底上直接生长出了具有原子级平整表面的高质量少层h-BN。·h-BN/β-Ga 2 O3异质结具有Ⅱ型交错带取向，导带和价带偏移分别为1.42和0.47eV。·h-BN/β-Ga 2 O3异质结构的功函数差为0.83eV，导致h-BN/β-Ga 2 O3侧的向上/向下能带弯曲。在β-Ga 2 O3表面集成二维超宽带隙六方氮化硼（h-BN）到货车德瓦耳斯异质结构中，由于其独特的性质，对于开发新型大功率器件和光电器件具有重要意义。异质结界面能带的取向是器件设计的关键，而h-BN/β-Ga 2 O3异质结的能带取向至今尚未得到研究。本文采用离子束溅射沉积法在β-Ga 2 O3单晶衬底上直接生长h-BN多层膜，制备了h-BN/β-Ga 2 O3异质结构。高质量的少层h-BN具有陡峭的界面和光滑的表面，这使得用X射线光电子能谱（XPS）可以准确地测定h-BN/β-Ga 2 O3异质界面的能带排列。测得h-BN/β-Ga 2 O3异质结的价带和导带偏移分别为0.47和1.42eV，具有Ⅱ型交错带排列.此外，还对h-BN/β-Ga 2 O3异质结的电子结构进行了理论和实验研究。这些结果表明h-BN/β-Ga 2 O3异质结构在光电子器件中具有很大的应用潜力。
• For the first time, the high-quality few-layer h-BN with atomically flat surface is directly grown on the β-Ga 2 O 3 substrates. • The h-BN/β-Ga 2 O 3 heterostructure exhibits a type-Ⅱ staggered band alignment with conduction and valence band offsets of 1.42 and 0.47 eV. • The work function difference is determined to be 0.83 eV for the h-BN/β-Ga 2 O 3 heterostructure, leading to an upward/downward band bending in the h-BN/β-Ga 2 O 3 side. Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on β-Ga 2 O 3 surface into van der Waals heterostructures is of great interest for developing novel high-power devices and optoelectronic devices because of their unique properties. The energy band alignment at the heterointerface is critical for device design, however, the band alignment of h-BN/β-Ga 2 O 3 heterojunction has not been investigated to date. In this work, the h-BN/β-Ga 2 O 3 heterostructure is constructed by directly growing h-BN few-layer on the β-Ga 2 O 3 single crystal substrate using ion beam sputtering deposition method. The high-quality few-layer h-BN with the abrupt interface and smooth surface allow for the accurate determination of band alignment at the h-BN/β-Ga 2 O 3 heterointerface by X-ray photoelectron spectroscopies. The valence and conduction band offsets are determined to be 0.47 and 1.42 eV for the h-BN/β-Ga 2 O 3 heterostructure, respectively, with a type-Ⅱ staggered band alignment. Furthermore, the electronic structures of h-BN/β-Ga 2 O 3 heterostructure are also investigated experimentally and theoretically. These results indicate that the h-BN/β-Ga 2 O 3 heterostructure has great potential in (opto)electronic devices.