In Situ Synthesis and Characterization of Poly(aryleneethynylene)-Grafted Reduced Graphene Oxide
In Situ Synthesis and Characterization of Poly(aryleneethynylene)-Grafted Reduced Graphene Oxide
复制标题
聚(亚芳基乙炔基)接枝还原氧化石墨烯的原位合成及表征
DOI：
10.1002/chem.201504692
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发表时间：
2016-02-12
影响因子：
4.3
通讯作者：
Chen, Yu
中科院分区：
文献类型：
--
作者：
Sun, Sai;Zhuang, Xiaodong;Chen, Yu
使用高度可溶的溴官能化还原氧化石墨烯（RGBr）作为用于表面导向Sonogashira-Hagihara聚合的关键石墨烯模板，原位制备了新型可溶性聚（亚芳基-亚乙炔基）接枝的还原氧化石墨烯（以下简称为PAE-g-RGO）。PAE-g-RGO的LUMO和HOMO的电子分布完全不同，表明存在电荷转移（CT）态（PAE（. -）-）RGO（.+））。负G（CS）值（-2.57eV）表明在o-DCB中经由（1）RGO * 发生的电荷分离是放热的并且是有利的。PAE-g-RGO的光诱导电子顺磁共振（LEPR）谱表明，在365nm光照射下，体系的自旋态密度降低，这是由于体系中发生了光诱导分子内电子转移。Al/PAE-g-RGO/ITO器件具有典型的双电开关特性。非易失性存储器的性能归因于CT诱导的电导变化，这是支持的分子计算结果和导电原子力显微镜（C-AFM）图像。
Using highly soluble bromo-functionalized reduced graphene oxide (RGBr) as a key graphene template for surface-directing Sonogashira-Hagihara polymerization, a novel soluble poly(arylene-ethynylene)-grafted reduced graphene oxide, hereafter abbreviated as PAE-g-RGO, was prepared in situ. The entirely different electron distribution of LUMO and HOMO of PAE-g-RGO suggested the existence of a charge-transfer (CT) state (PAE(.-)-RGO(.+)). The negative G(CS) value (-2.57eV) indicates that the occurrence of the charge separation via (1)RGO* in o-DCB is exothermic and favorable. Upon irradiation with 365nm light, the light-induced electron paramagnetic resonance (LEPR) spectrum of PAE-g-RGO showed a decrease in the spin-state density owing to photoinduced intramolecular electron transfer events in this system. A sandwich-type Al/PAE-g-RGO/ITO device showed representative bistable electrical switching behavior. The nonvolatile memory performance was attributed to the CT-induced conductance changes, which was supported by molecular computation results and conductive atomic force microscopy (C-AFM) images.