Heteroepitaxy and characterization of CuGaSe2 layers grown by low‐pressure metalorganic chemical‐vapor deposition
Heteroepitaxy and characterization of CuGaSe2 layers grown by low‐pressure metalorganic chemical‐vapor deposition
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低压金属有机化学气相沉积 CuGaSe2 层的异质外延和表征
DOI：
10.1063/1.357503
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发表时间：
1994
影响因子：
3.2
通讯作者：
H. Higuchi
中科院分区：
文献类型：
--
作者：
S. Chichibu;Y. Harada;M. Uchida;T. Wakiyama;S. Matsumoto;S. Shirakata;S. Isomura;H. Higuchi
CuGaSe2黄铜矿化合物通过低压金属有机化学气相沉积方法在GaAs和GaP衬底上异质外延生长。通过光反射（PR）、光致发光（PL）、X射线衍射、透射电子显微镜、透射电子衍射和电子探针显微分析全面表征了光学和结构性质。CuGaSe2外延层在GaAs（001）衬底上具有c（001）表面，在GaP（001）衬底上具有（100）表面，结果与CuAlSe2的情况相似。从PR谱的分析确定与最高价带相关的A、B和C激子的能量，并且优质外延层的能量接近于体晶体的能量。价带中的晶场分裂的轻微增加被讨论为由晶格失配引起的外延层中的晶格应变。低温PL谱在1.71 eV处有一个强峰，表明该峰的能量为1.71 eV。
CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low‐pressure metalorganic chemical‐vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x‐ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron‐probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good‐quality epilayers are close to those of the bulk crystal. The slight increase of the crystal‐field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low‐temperature PL spectra exhibited an intense peak at 1.71 eV, the ene...