Investigations of SU-8 removal from metallic high aspect ratio microstructures with a novel plasma technique
Investigations of SU-8 removal from metallic high aspect ratio microstructures with a novel plasma technique
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DOI：
10.1007/s00542-007-0537-4
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发表时间：
2008-08
期刊：
影响因子：
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通讯作者：
R. Engelke;J. Mathuni;G. Ahrens;G. Gruetzner;M. Bednarzik;D. Schondelmaier;B. Loechel
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文献类型：
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作者：
R. Engelke;J. Mathuni;G. Ahrens;G. Gruetzner;M. Bednarzik;D. Schondelmaier;B. Loechel
第一个有前途的调查SU-8去除实验与一种新的等离子体刻蚀技术。该技术的基本思想是使用具有水冷等离子体区的行波反应器（TWR）微波源将化学自由基（例如氧自由基）的高效生成与抗蚀剂聚合物的化学反应分离。蚀刻工具以远程和下游模式操作，具有非常高的自由基密度，允许卡盘上的衬底的精确热管理，从而提供受控的工艺条件而没有温度偏差，并且通常防止离子轰击，至少导致温和的处理而不危害金属结构的完整性。在第一次实验中观察到非常好的SU-8去除，残留物非常少，蚀刻速率高达10 μm/min，有机会达到20 μm/min以上。蚀刻过程是各向同性的，并且在整个去除过程中速率保持稳定，即使对于1 mm或更厚的非常厚的膜也是如此。SU-8去除的第一个应用实例证明了所提出的基于微波等离子体的技术的巨大潜力，不仅用于金属微部件的清洁，而且用于其他更敏感的材料，这通过从石墨X射线掩模衬底上去除SU-8来证明。
First promising investigations of SU-8 removal experiments with a novel plasma etching technique are presented. The basic idea of this technique is to separate the highly effective generation of chemical radicals (e.g. oxygen radicals) using a traveling wave reactor (TWR) microwave source with water cooled plasma zone from the chemical reaction with the resist polymer. The etching tool operates in a remote and downstream mode with very high radical density allowing precise thermal management of the substrates on the chuck giving controlled process conditions without deviation in temperature, and generally preventing ion bombardment, at least resulting in gentle processing without jeopardizing the integrity of the metal structures. Very good removal of SU-8 with very few residues and very high etching rates up to 10 μm per minute are observed in first experiments which are offering chances to get even more than 20 μm per minute. The etching process is isotropic, and the rate stays stable during the whole removing process even for very thick films of 1 mm and more. First application examples of SU-8 removal are demonstrating the great potential of the presented microwave plasma based technique not only for the cleaning of metallic microparts but also for other more sensitive materials which is demonstrated by SU-8 removal from graphite X-ray mask substrates.