Poling Field Dependence of Ferroelectric Properties in Piezoelectric Ceramics and Single Crystal

Poling Field Dependence of Ferroelectric Properties in Piezoelectric Ceramics and Single Crystal
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压电陶瓷和单晶中铁电特性的极化场依赖性

DOI:
10.1080/713716341
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发表时间:
2002
期刊:
影响因子:
0.8
通讯作者:
T. Ogawa
T. Ogawa
中科院分区:
材料科学4区
文献类型:
--
作者:
T. Ogawa

文献摘要

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通过测量铁电材料的介电和压电性能与极化场的关系,研究了铁电材料的电畴结构。所评价的铁电材料包括:具有四方相和菱方相的软质和硬质锆钛酸铅(PZT)陶瓷、钛酸铅(PT)陶瓷、钛酸钡(BT)陶瓷和弛豫基Pb(Zn 1/3 Nb 2/3)0.91Ti0.0 9 O3(PZNT)单晶。将极化电场(E)从0 M + EM 0 MmEM 0改变到+E,测量了机电耦合系数(kp,k33)、介电常数(lr)和频率常数(fc)。由于180°畴夹持,在相同的E下,kp、k33和lr均达到最小值。此外,由于畴夹持的E对应于由极化场依赖性确定的矫顽场(Ec)。在Ec处,在软PZT(四面体和菱面体)和硬PZT(四面体)陶瓷、BT陶瓷和PZNT单晶的情况下确认了最大fc。人们认为,通过畴夹持(N O)的电吸引,材料变得机械坚硬。在硬PZT(菱面体)、PT和BT陶瓷中,在E处观察到lr的峰值和/或最小fc,这对应于90°、71°和109°畴旋转的阈值。
Domain structures of ferroelectric materials were investigated by measuring the poling field dependence of dielectric and piezoelectric properties. Ferroelectric materials evaluated consist of as follows: soft and hard lead zirconate titanate (PZT) ceramics with tetragonal and rhombohedral phases, lead titanate (PT) ceramics, barium titanate (BT) ceramics and a relaxor based single crystal of Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O 3 (PZNT). Changing the poling field (E) from 0 M +E M 0 M m E M 0 to +E, the electromechanical coupling factor (k p , k 33 ), dielectric constant ( l r ) and frequency constant (fc) were measured. The minimum k p , k 33 and l r were obtained at the same E because of the 180° domain clamping. Furthermore, the E due to the domain clamping corresponded to the coercive field (Ec) determined by the poling field dependences. At the Ec, maximum fc was confirmed in the cases of soft PZT (tetragonal and rhombohedral) and hard PZT (tetragonal) ceramics, BT ceramics and PZNT single crystal. It was thought that the materials became mechanically hard by the electrical attracting through the domain clamping ( N O ). In hard PZT (rhombohedral), PT and BT ceramics, the peak of l r and/or minimum fc were observed at an E, which corresponds to the threshold of 90°, 71° or 109° domain rotations.