Valley Hall effect and nonlocal transport in strained graphene
Valley Hall effect and nonlocal transport in strained graphene
复制标题
应变石墨烯中的谷霍尔效应和非局域传输
DOI：
10.1088/2053-1583/aa5e9b
复制
发表时间：
2016
期刊：
影响因子：
5.5
通讯作者：
M. Cazalilla
中科院分区：
文献类型：
--
作者：
Xian;Chunli Huang;M. Cazalilla
石墨烯经受高水平的剪切应变导致强伪磁场，从而导致伪朗道能级的出现。在这里，我们表明，在适度的应变水平下，石墨烯也可以维持经典的谷霍尔效应（VHE），这种效应可以在非局域输运测量中检测到。我们提供了一个理论的应变诱导VHE从量子玻尔兹曼方程。这使我们能够表明，平均在短程杂质配置破坏谷之间的量子相干性，离开弹性散射时间和谷间散射率作为唯一的参数表征输运理论。利用该理论，我们计算了扩散状态下霍尔栅器件的非局部电阻。我们的理论也适用于研究其他二维材料和货车der Walls异质结构的（非局部）输运性质中的适度应变效应。
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of pseudo-Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley Hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory of the strain-induced VHE starting from the quantum Boltzmann equation. This allows us to show that, averaging over short-range impurity configurations destroys quantum coherence between valleys, leaving the elastic scattering time and inter-valley scattering rate as the only parameters characterizing the transport theory. Using the theory, we compute the nonlocal resistance of a Hall bar device in the diffusive regime. Our theory is also relevant for the study of moderate strain effects in the (nonlocal) transport properties of other two-dimensional materials and van der Walls heterostructures.
石墨烯系统中的应变折叠辅助运输
影响因子：
3.7
作者：
Carrillo-Bastos, R.;León, C.;Faria, D.;Latgé, A.;Andrei, E. Y.;Sandler, N.
通讯作者：
Sandler, N.
石墨烯上吸附原子有序转变的输运异常
影响因子：
3.7
作者：
Kopylov S
通讯作者：
Kopylov S