Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H2O Vapor
Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H2O Vapor
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H2O 蒸汽对非晶硅和多晶硅薄膜的热处理
DOI：
10.1143/jjap.37.l112
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发表时间：
1998
影响因子：
1.5
通讯作者：
Keiko Saitoh Keiko Saitoh
中科院分区：
文献类型：
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作者：
Toshiyuki Sameshima Toshiyuki Sameshima;Mitsuru Satoh Mitsuru Satoh;Keiji Sakamoto Keiji Sakamoto;Ai Hisamatsu Ai Hisamatsu;Kentaro Ozaki Kentaro Ozaki;Keiko Saitoh Keiko Saitoh
报道了激光诱导非晶硅、低压化学气相非晶硅(LPCVD a-Si)和激光晶化多晶硅薄膜经350℃H2O蒸气热处理后电学和光学性质的变化。热处理降低了薄膜的暗电导率，提高了薄膜的光电导。A-Si薄膜在低于1.5 eV的光子能量范围内的光吸收被降低。LPCVD a-Si的光学带隙从1.48 eV略微增加到1.51 eV。处理后氢气浓度增加小于2×1020 cm-3。这些结果表明，水蒸汽热处理降低了少量氢掺杂的硅膜中的缺陷密度。
Changes in electrical and optical properties induced by heat treatment with H2O vapor at 350 °C are reported for laser-induced amorphous silicon, low pressure chemical vapor amorphous silicon (LPCVD a-Si) and laser crystallized polycrystalline silicon films. The dark conductivity was reduced and the photoconductivity was increased by the heat treatment for these films. The optical absorption in the photon energy range lower than 1.5 eV was reduced for the a-Si films. The optical band gap was slightly increased from 1.48 eV to 1.51 eV for the LPCVD a-Si. The increase in hydrogen concentration was less than 2×1020 cm-3 after the treatment. These results show that the heat treatment with H2O vapor reduces the defect density in the silicon films with a small amount of hydrogen incorporation.