Nitrate-based metalorganic deposition of CeO_2 on yttria-stabilized zirconia
Nitrate-based metalorganic deposition of CeO_2 on yttria-stabilized zirconia
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DOI：
10.1557/jmr.2006.0022
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发表时间：
2006-01
影响因子：
2.7
通讯作者：
D. Wesolowski;M. Cima
中科院分区：
文献类型：
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作者：
D. Wesolowski;M. Cima
采用硝酸水金属有机沉积（MOD）工艺，在钇稳定氧化锆（YSZ）单晶衬底上形成了30 nm厚的c轴织构氧化铈（CeO_2）层。x射线衍射结果表明，CeO_2层为（001）取向膜，最大半宽ω扫描全宽为1.47°。原子力显微镜测量的氧化铈膜的平均粗糙度约为5 nm。采用三氟乙酸（TFA）基MOD非原位工艺，在该帽层上沉积0.35 μm Ba_2YCu_3O_7−x （YBCO）层，测量了高达3.6 × 10^6 A/cm^2的临界电流密度。在最常见的涂覆导体缓冲层堆叠中使用的物理气相沉积衍生的铈帽层可以被这种MOD处理的薄膜所取代。
An aqueous nitrate metalorganic deposition (MOD) process was used to form a 30-nm-thick c -axis-textured ceria (CeO_2) layer on a yttria-stabilized zirconia (YSZ) single-crystal substrate. X-ray diffraction showed the CeO_2 layer was an (001) oriented film with a ω-scan full width at half-maximum of 1.47°. The average roughness of the ceria films, measured by atomic force microscopy, was about 5 nm. Critical current densities of up to 3.6 × 10^6 A/cm^2 were measured on a 0.35-μm Ba_2YCu_3O_7−x (YBCO) layer deposited over this cap layer using a trifluoroacetate (TFA)-based MOD ex situ process. The physical vapor deposition-derived ceria cap layer used in the most common coated conductor buffer layer stacks may be replaced by such a MOD processed film.