A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application
A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application
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用于 S 波段高功率应用的 kW 级 AlGaN/GaN HEMT 托盘放大器
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Sano
中科院分区：
文献类型：
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作者：
E. Mitani;M. Aojima;S. Sano
我们开发了一种工作在s波段的kw级AlGaN/GaN HEMT托盘放大器。该托盘放大器由内部部分匹配的AlGaN/GaN HEMT组成，该HEMT基于软PC板的铜底座，针对s波段进行了优化。所研制的托盘放大器性能优异，在2.9 ~ 3.3 GHz的宽频率范围内，输出功率超过800 W，线性增益高达13.6dB，效率高达52%，工作电压为65 V，脉冲条件下占空率为10%，脉宽为200 μ c。当漏极电压为80 V时，峰值功率为1 kW，漏极效率为49.5%，3.2 GHz时线性增益为14.1 dB。据我们所知，这是有史以来最高的功率托盘放大器报道的s波段。
We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.