Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature
Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature
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DOI：
10.1021/ja307804v
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发表时间：
2012-10-24
影响因子：
15
通讯作者：
Iannotta, Salvatore
中科院分区：
文献类型：
--
作者：
Verucchi, Roberto;Aversa, Lucrezia;Iannotta, Salvatore
碳化硅（SiC）具有独特的化学、物理和机械性能。强烈限制基于SiC的技术的因素是高温合成。在这项工作中，我们提供了前所未有的实验和理论证据的3C-SiC在硅上外延在室温下使用巴克敏斯特富勒烯（C-60）超声束。化学过程，如C-60断裂，在30-35 eV的前体动能下被激活，远离热力学平衡。这一结果为在无法承受高温的聚合物或塑料上合成SiC铺平了道路。
Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C-60) supersonic beam. Chemical processes, such as C-60 rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.