The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks
The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks
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氧等离子体对极紫外 (EUV) 掩模基板 Ru 覆盖层化学成分和形貌的影响
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发表时间：
2008
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通讯作者：
Leonid Belau
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作者：
Leonid Belau
P-5B-03 氧等离子体对极紫外 (EUV) 掩模坯料 Ru 覆盖层的化学成分和形态的影响 Leonid Belau 1 、 Jeong Y. Park 2 、 Ted Liang 4 和 Gabor A. Somorjai 1,2,3* 加州大学化学系，伯克利，加利福尼亚州 94720 化学科学部，劳伦斯伯克利国家实验室，伯克利，加利福尼亚州94720 材料科学部，劳伦斯伯克利国家实验室，伯克利，加利福尼亚州 94720 组件研究、技术和制造集团，英特尔公司，圣克拉拉，加利福尼亚州 95054 摘要 去除极紫外 (EUV) 掩模表面的污染物是提高下一代 EUV 光刻可靠性的最重要方面之一。我们使用表面敏感分析方法：X 射线光电子能谱 (XPS)、原子力显微镜 (AFM) 和透射电子显微镜 (TEM) 报告了氧等离子体处理后钌 (Ru) 掩模表面的化学和形态变化。 EUV 掩模的化学分析显示，表面下氧浓度、Ru 氧化和表面粗糙度均有所增加。不同光电子起飞角度的 XPS 光谱表明，经过氧等离子体处理后，EUV 掩模表面覆盖有化学吸附的氧。有人提出柯肯达尔效应是解释钌表面氧化的最合理的机制。根据TEM截面分析，氧等离子体对Ru覆盖层的蚀刻速率估计为1.5±0.2A/min。 * 通讯作者，电子邮件地址：somorjai@berkeley.edu
P-5B-03 The effects of oxygen plasma on the chemical composition and morphology of the Ru capping layer of the extreme ultraviolet (EUV) mask blanks Leonid Belau 1 , Jeong Y. Park 2 , Ted Liang 4 , and Gabor A. Somorjai 1,2,3* Department of Chemistry, University of California, Berkeley, California 94720 Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Components Research, Technology and Manufacturing Group, Intel Corporation, Santa Clara, CA 95054 ABSTRACT Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. We report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5±0.2 A/min, based on TEM cross sectional analysis. * Corresponding author, e-mail address: somorjai@berkeley.edu