Creep and stress-rupture behavior of Y2O3–Nd2O3-doped silicon nitrides with different additive contents
Creep and stress-rupture behavior of Y2O3–Nd2O3-doped silicon nitrides with different additive contents
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不同添加剂含量的Y2O3-Nd2O3掺杂氮化硅的蠕变和应力断裂行为
DOI：
10.1016/s0955-2219(01)00250-3
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发表时间：
2002
影响因子：
5.7
通讯作者：
N. Hirosaki
中科院分区：
文献类型：
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作者：
Jian Cao;A. Okada;N. Hirosaki
对两种等级的气压烧结氮化硅进行了拉伸蠕变试验。氮化硅SN 4含有2.0摩尔%的Nd2O3和2.0摩尔%的Y2O3作为烧结助剂，氮化硅SN 1的添加剂为0.5摩尔%的Nd2O3和0.5摩尔%的Y2O3。SN 4的延迟失效被认为是由蠕变断裂引起的，因为在1300°C下在137至220 MPa的应力范围内发现了相当大的蠕变变形，具有n=10.7的高应力指数，并且应力断裂参数被确定为N=8.4。SN 1的延迟失效被认为是亚临界裂纹扩展的结果，因为没有发现显著的蠕变变形，并且确定了N=20.7的高应力断裂参数。根据蠕变试验结果和显微组织观察，探讨了该合金的蠕变和持久机理。
Tensile creep tests were performed on two grades of gas-pressure sintered silicon nitride. Silicon nitride SN4 contained 2.0 mol% Nd2O3and 2.0 mol% Y2O3as sintering aids, and the additives for silicon nitride SN1 were 0.5 mol% Nd2O3and 0.5 mol% Y2O3. The delayed failure of SN4 was thought to result from creep rupture because considerable creep deformation was found with a high stress exponent of n=10.7 in the stress range of 137 to 220 MPa at 1300°C, and the stress-rupture parameter was determined to be N=8.4. The delayed failure of SN1 was thought to result from subcritical crack growth since no significant creep deformation was found and a high stress-rupture parameter of N=20.7 was determined. The creep and stress-rupture mechanisms are discussed based on the creep test results and microstructure observation.
纳米晶氮化硅陶瓷的高应变率超塑性变形
DOI：
--
发表时间：
2015
期刊：
影响因子：
--
作者：
A. Okada;S. Shoji;M. Nimura;A. Shigetou;K. Sakuma;J. Mizuno;R. Wananuruksawong
通讯作者：
R. Wananuruksawong