4-12 GHz InP HEMT-based MMIC low-noise amplifier
4-12 GHz InP HEMT-based MMIC low-noise amplifier
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4-12 GHz 基于 InP HEMT 的 MMIC 低噪声放大器
DOI：
10.1109/iciprm.2004.1442603
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
W. Bachtod
中科院分区：
文献类型：
--
作者：
R. Limacher;M. Auf der Maur;H. Meier;A. Megej;A. Orzati;W. Bachtod
本文提出了一种工作在4-12 GHz频段的单片集成三级低噪声放大器。该电路是在我们的内部0.2 /spl μ/m的InP HEMT工艺使用共面波导技术制造的。在感兴趣的频带中，所制造的放大器在室温下显示出1.25 dB的平均噪声系数和28 dB的平均增益，增益涟漪为/spl plusmn/2 dB。LNA的总直流功耗为41 mW。在10 K的温度下，平均增益为27 dB，平均噪声温度为13 K，而直流功耗降低到5.7 mW。
In this paper, we present a monolithically integrated 3-stage low-noise amplifier working in the 4-12 GHz band. The circuit was fabricated on our in-house 0.2 /spl mu/m InP HEMT process using coplanar waveguide technology. In the band of interest, the fabricated amplifier shows an average noise figure of 1.25 dB and an average gain of 28 dB with a gain ripple of /spl plusmn/2 dB at room temperature. The total dc power consumption of the LNA is 41 mW. At a temperature of 10 K, an average gain of 27 dB and average noise temperature of 13 K was achieved, whereas the dc power consumption was reduced to 5.7 mW.