Activation volume for antimony diffusion in silicon and implications for strained films
Activation volume for antimony diffusion in silicon and implications for strained films
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DOI：
10.1063/1.124561
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发表时间：
1999-08
影响因子：
4
通讯作者：
Yuechao Zhao;M. Aziz;H. Gossmann;S. Mitha;D. Schiferl
中科院分区：
文献类型：
--
作者：
Yuechao Zhao;M. Aziz;H. Gossmann;S. Mitha;D. Schiferl
Sb在Si中的扩散率受到压力的阻碍，其特征在于在860 °C下的活化体积为V*=+0.07 0. 02倍的Si原子体积。V* 接近从空位机制的原子计算推断的值。我们的静水压力的结果被用来预测双轴应变对Sb扩散的影响。预测匹配测量行为的Sb扩散在双轴应变Si和Si-Ge薄膜。这项工作提供了额外的支持锑扩散的空位机制的优势，并展示了第一步的发展能力预测的非流体静力学应力对扩散的影响。
The diffusivity of Sb in Si is retarded by pressure, characterized at 860 °C by an activation volume of V*=+0.07±0.02 times the Si atomic volume. V* is close to values inferred from atomistic calculations for a vacancy mechanism. Our results for hydrostatic pressure are used to predict the effect of biaxial strain on Sb diffusion. The prediction matches measured behavior for Sb diffusion in biaxially strained Si and Si–Ge films. This work lends additional support to the predominance of the vacancy mechanism for Sb diffusion and demonstrates the first steps in the development of a capability for predicting the effect of nonhydrostatic stress on diffusion.