Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects
Atomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects
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DOI：
10.1063/1.371899
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发表时间：
2000
影响因子：
3.2
通讯作者：
Xiaowang W. Zhou;H. Wadley
中科院分区：
文献类型：
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作者：
Xiaowang W. Zhou;H. Wadley
采用分子动力学模拟方法研究了原子入射角对Ni/Cu/Ni多层膜原子尺度结构的影响。对于1 eV或更小的入射原子能量，增加入射角增加了界面粗糙度，导致在镍层中形成空隙，并在金属层之间的界面处混合。在低冲击能量斜角沉积过程中形成的界面粗糙度显着降低生长过程中的衬底旋转。然而，旋转界面混合没有有益的影响。使用更高的入射原子能量（0.5eV/atom）导致更平坦的界面，并消除了斜入射条件下的空隙，但它也引起了更严重的原子交换机制的界面混合。当低（热）冲击能量用于存款每一个新的金属层的前几个单层，通过交换机制的混合。
Molecular dynamics simulations have been used to explore the effects of incident adatom angle upon the atomic scale structure of Ni/Cu/Ni multilayers grown by vapor deposition under controlled incident atom energy conditions. For incident atom energies of 1 eV or less, increasing the incident angle increased interfacial roughness, resulted in void formation in the nickel layer, and intermixing at the interfaces between metal layers. The interfacial roughness that formed during low impact energy oblique angle deposition was significantly reduced by substrate rotation during growth. However, rotation had no beneficial effects upon interfacial mixing. The use of a higher incident atom energy (⩾5 eV/atom) resulted in flatter interfaces and eliminated voids under oblique incidence conditions, but it also caused more severe interfacial mixing by an atomic exchange mechanism. When low (thermal) impact energies were used to deposit the first few monolayers of each new metal layer, intermixing by the exchange mech...