Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics.
Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics.
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DOI：
10.1021/acsami.2c04752
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发表时间：
2022-08
影响因子：
9.5
通讯作者：
Kexin Wang;Jiaxuan Liu;Mohamed E. El-Khouly;Xiaosheng Cui;Qiang Che;Bin Zhang;Yu Chen
中科院分区：
文献类型：
--
作者：
Kexin Wang;Jiaxuan Liu;Mohamed E. El-Khouly;Xiaosheng Cui;Qiang Che;Bin Zhang;Yu Chen
保护存储在电子存储设备中的敏感信息不被泄露的关键是开发能够在紧急情况下快速销毁的瞬时电子设备。以poly[thiophene-alt-4，4-bis(6-bromohexyl)-4H-cyclopenta(1，2-b:5，4-b‘)dithiophene]与N-甲基咪唑反应合成的高水溶性聚噻吩型共轭聚电解质PtT-NMI+BR-为活性物质，制备了柔性电子器件Al/PtT-NMi+BR-/ITO涂层聚酯(ITO：氧化铟；PET：聚对苯二甲酸乙二醇酯)。该器件在±3V的扫描电压范围内表现出典型的非易失性可重写电阻随机存取存储器(RRAM)效应，在±1V的小扫描电压范围内表现出与历史相关的记忆开关性能，并对生物系统的学习记忆功能和突触增强/抑制进行了模拟。PtT-NMI+Br基电子器件的开关机制可能与偏压下的离子迁移密切相关。一旦加水到这个装置中，由于活化层的溶解，它会在20 S内被迅速摧毁。该器件不仅是一种典型的暂态器件，而且在电子封装后还可以用来构造具有长期稳定性的常规忆阻器。此外，器件中的可溶有源层可以很容易地从其水溶液中回收并重新用于制造新的暂态忆阻器。这项工作为设计和构建在不久的将来可以被水迅速摧毁的神经形态计算系统提供了一种新的思路。
The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI+Br- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT-NMI+Br-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of ±3 V and a history-dependent memristive switching performance at a small sweep voltage range of ±1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI+Br--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.