Low-Temperature Deposition of SrRuO3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition
Low-Temperature Deposition of SrRuO3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition
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金属有机化学气相沉积法低温沉积SrRuO3薄膜
DOI：
10.1143/jjap.39.572
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发表时间：
2000
影响因子：
1.5
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
N. Okuda;K. Saito;H. Funakubo
采用金属有机化学气相沉积(MOCVD)方法在(100)LaAlO_3衬底上制备了SrRuO_3薄膜，沉积温度从550°C到750°C。在600℃以下，随着沉积温度的降低，薄膜的a轴取向度逐渐降低。然而，当Ru/(Ru+Sr)比为0.5时，薄膜的电阻率与单晶的电阻率基本相同，且与沉积温度无关。在750°C沉积温度下，薄膜厚度在30~250 nm范围内基本相同，且随Ru/(Ru+Sr)比低于0.45而增大。
SrRuO3 thin films were prepared on (100) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD) at various deposition temperatures from 550°C to 750°C. The composition of the film can be controlled by monitoring the composition of the input source gas. Below 600°C, the degree of a-axis orientation of the film gradually decreased with decreasing deposition temperature. However, the resistivity of the film was almost the same for that reported for the single crystal and was independent of the deposition temperature when the Ru/(Ru+Sr) ratio of the film was 0.5. The film had almost the same value for the film thickness from 30 to 250 nm deposited at 750°C. Moreover, it increased with the Ru/(Ru+Sr) ratio below 0.45.