A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability
A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability
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DOI：
10.1109/ted.2007.900007
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发表时间：
2007-07
影响因子：
3.1
通讯作者：
M. Mori;K. Oyama;Yasuhiko Kohno;J. Sakano;J. Uruno;K. Ishizaka;Daisuke Kawase
中科院分区：
文献类型：
--
作者：
M. Mori;K. Oyama;Yasuhiko Kohno;J. Sakano;J. Uruno;K. Ishizaka;Daisuke Kawase
This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 and a tough short-circuit capability of more than 10 . The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.
