Interaction between Kondo States and the Hall Effect of Dense Kondo System CexLa1-xB6
Interaction between Kondo States and the Hall Effect of Dense Kondo System CexLa1-xB6
复制标题
近藤态之间的相互作用与密集近藤系统 CexLa1-xB6 的霍尔效应
DOI:
10.1143/jpsj.54.1923
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发表时间:
1985
影响因子:
1.7
通讯作者:
T. Kasuya
中科院分区:
文献类型:
--
作者:
N. Sato;A. Sumiyama;S. Kunii;H. Nagano;T. Kasuya
Measurements of electrical resistivity (37 mK\({\leqq}T{\lesssim}780\) K for CeB 6 ), magnetoresistivity (\(H{\lesssim}100\) kOe) and Hall resistivity (\(H{\lesssim}150\) kOe, 4.2K≦ T ≦53 K) have been done for single crystalline samples of Ce x La 1- x B 6 (0.03≦ x ≦1). At very low temperatures, the T 2 law of resistivity is confirmed. A kind of universality for A /γ 2 =α is found even for magnetically ordered CeB 6 . The concentration dependence of residual resistivity shows that an interaction effect between Kondo states appears sharply around x =0.1. The interaction is weak for x <0.1 and does not vary so much for 0.1≦ x <1. The Hall resistivity is proportional to magnetic field up to 150 kOe and is independent of the temperature down to 4.2 K. The real value of the Kondo temperature is evaluated.