Study on the mechanism of the growth and shrinkage of stacking fault tetrahedral during the fluctuation of their size under electron irradiation

Study on the mechanism of the growth and shrinkage of stacking fault tetrahedral during the fluctuation of their size under electron irradiation
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电子辐照下堆垛层错四面体尺寸波动过程中生长和收缩机理研究

DOI:
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发表时间:
2002
期刊:
Journal of Electron Microscopy S51
影响因子:
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通讯作者:
K.Ono
K.Ono
中科院分区:
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文献类型:
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作者:
K.Arakawa;S.Arai;H.Orihara;K.Ono

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