SiC MOSFETs for future motor drive applications
SiC MOSFETs for future motor drive applications
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用于未来电机驱动应用的 SiC MOSFET
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
T. Undeland
中科院分区：
文献类型：
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作者：
S. Tiwari;O. Midtgård;T. Undeland
本文研究了用于电机驱动应用的六组SiC MOSFET和Si IGBT模块的开关性能。两种模块具有相同的封装和额定电压（1.2 kV）。模块的三个桥臂被串联，形成单个半桥配置，以实现更高的输出功率。使用标准的双脉冲方法测量导通和关断开关能量损耗。在模拟三相电机驱动逆变器中的详细逆变器损耗时，将从实验室测量获得的开关能量损耗和从实验室测量获得的导通损耗用作查找表输入。绘制了不同开关频率的总逆变器损耗，以说明从效率的角度来看，SiC MOSFET可以为电机驱动逆变器带来比Si IGBT更好的性能。整体分析深入了解了SiC MOSFET如何在所有开关频率范围内优于Si IGBT，并且在更高的频率和温度下优势变得更加明显。
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double pulse methodology. The conduction losses from the datasheet and the switching energy losses obtained from the laboratory measurements are used as a look up table input when simulating the detailed inverter losses in a three-phase motor drive inverter. The total inverter loss is plotted for different switching frequencies in order to illustrate the performance improvement that SiC MOSFETs can bring over Si IGBTs for a motor drive inverter from the efficiency point of view. The overall analysis gives an insight into how SiC MOSFET outperforms Si IGBT over all switching frequency ranges with the advantages becoming more pronounced at higher frequencies and temperatures.