The influence of impurities on Ga electrowinning: Vanadium and iron
The influence of impurities on Ga electrowinning: Vanadium and iron
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杂质对Ga电积的影响：钒、铁
DOI：
10.1016/j.hydromet.2014.03.009
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发表时间：
2014-05-01
期刊：
影响因子：
4.7
通讯作者：
Zhang, Yi
中科院分区：
文献类型：
--
作者：
Liu, Ling;Wang, Mingyong;Zhang, Yi
在电解提取镓的过程中，铁和钒是镓溶液中的主要金属杂质。研究了Fe（III）和V（V）对Ga电积电流效率的影响。用扫描电镜、能谱仪和动电位极化法研究了Ga镀层的表面结构。结果表明，V（V）的存在使量子效率急剧下降。在含有杂质的Ga溶液中，特别是在V（V）存在和较高电流密度下，容易生成球形Ga颗粒。由于Ga和杂质的表面结构和性质的差异，使得含有杂质的Ga颗粒和新形成的Ga晶体很难进入Ga薄膜。结果，新形成的Ga晶体容易再溶解，这导致QE降低。当Fe（III）和V（V）同时存在于Ga溶液中时，由于Ga的亲铁亲和性，在较低电流密度下的QE增加。(C)2014爱思唯尔有限公司版权所有。
During the electrolytic extraction of Ga, iron and vanadium are main metal impurities in Ga solution. The influences of Fe(III) and V(V) on current efficiency (QE) of Ga electrowinning were studied. The surface structures of electrodeposited Ga coatings were examined by SEM, EDS and potentiodynarnic polarization. The results indicate that QE is sharply decreased in the presence of V(V). Spherical Ga particles are easily produced in Ga solution with impurities, especially in the presence of V(V) and at higher current density. It is difficult for Ga particles with impurities and newly formed Ga crystals to incorporate into Ga films due to the difference of surface structure and properties between Ga and impurities. As a result, newly formed Ga crystals are easily re-dissolved which leads to the decrease of QE. When both Fe(III) and V(V) exist in Ga solution, QE at lower current density is increased due to the siderophile affinity of Ga. (C) 2014 Elsevier B.V. All rights reserved.