Formation of Titania Submicrometer Patterns by the Combination of Synthesis from an Aqueous Solution and Transcription of a Resist Pattern
Formation of Titania Submicrometer Patterns by the Combination of Synthesis from an Aqueous Solution and Transcription of a Resist Pattern
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通过水溶液合成和抗蚀剂图案转录相结合形成二氧化钛亚微米图案
DOI：
10.1111/j.1151-2916.2003.tb03594.x
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
T. Yao
中科院分区：
文献类型：
--
作者：
Naoshi Ozawa;H. Yabe;T. Yao
以印刷抗蚀剂图案的crn包覆硅片为衬底，研究了一种形成二氧化钛图案的新方法。在室温下，用（NH4）2TiF6和B2O3的混合溶液浸泡，在衬底的整个表面形成TiO2薄膜。然后用丙酮将抗蚀剂材料与其上形成的TiO2一起溶解。转录抗蚀剂图案的TiO2薄膜的微小图案形成了。TiO2薄膜的最小线宽为300 nm，这也是抗蚀剂图案的最小线宽。
A CrN–coated silicon wafer printed with a resist pattern was used as a substrate, and a novel method for forming titania (TiO2) patterns was investigated. A TiO2 thin film formed over the whole surface of the substrate by soaking in a mixed solution of (NH4)2TiF6 and B2O3 at room temperature. The resist material then was dissolved off, using acetone, together with the TiO2 formed on it. A minute pattern of the TiO2 thin film, transcribing the resist pattern, formed. The minimum line width of the TiO2 thin film was 300 nm, which was also the minimum line width of the resist pattern.