Investigation of the sulfur doping profile in femtosecond-laser processed silicon
Investigation of the sulfur doping profile in femtosecond-laser processed silicon
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DOI：
10.1063/1.4807679
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发表时间：
2013-05
影响因子：
4
通讯作者：
Kay-Michael Guenther;T. Gimpel;S. Kontermann;W. Schade
中科院分区：
文献类型：
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作者：
Kay-Michael Guenther;T. Gimpel;S. Kontermann;W. Schade
在这封信中，我们证明硅可以掺杂超过 3 × 1016 cm−3 溶解度极限的电活性硫供体。我们通过二次离子质谱 (SIMS) 和电容电压测量研究了飞秒激光处理的硅表面的硫掺杂分布。 SIMS 证实了之前的观察结果，即飞秒激光过程可导致表面出现 5×1019 cm−3 的硫超掺杂。然而，电学测量表明，只有不到 1% 的硫作为供体具有电活性。
In this letter, we demonstrate that silicon can be doped with electrically active sulfur donors beyond the solubility limit of 3 × 1016 cm−3. We investigate the sulfur doping profile at the surface of femtosecond-laser processed silicon with secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements. SIMS confirms previous observations that the fs-laser process can lead to a sulfur hyperdoping of 5×1019 cm−3 at the surface. Nevertheless, the electrical measurements show that less than 1% of the sulfur is electrically active as a donor.